Semiconductor raman laser
- 1 January 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings J Optoelectronics
- Vol. 132 (1) , 81-84
- https://doi.org/10.1049/ip-j.1985.0016
Abstract
The semiconductor Raman laser using the longitudinal optical phonon mode of GaP has a very low threshold value of optical input power. To reduce the threshold optical input power and power density further, a crystal as thin as 160 µm with a wave-guiding structure is used. Epitaxial layers of GaP with a thickness of 280 µm are demonstrated as the low-threshold semiconductor Raman laser, for which the threshold input power density is as low as 1.7 × 106 W/cm2.Keywords
This publication has 0 references indexed in Scilit: