Very low threshold current density of a GaInP/AlGaInP double-heterostructure laser grown by MOCVD

13 August 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (17) , 894-895
https://doi.org/10.1049/el:19870632

Abstract

A GaInP/AlGaInP broad-area (60 × 500 μm²) laser grown by MOCVD has obtained a very low threshold current density J_th of 1.1 kA/cm². The dependence of J_th and differential quantum efficiency on cavity length was measured to determine internal quantum efficiency, losses and the gain constant, which were found to be comparable to these characteristics in an AlGaAs laser.

Keywords

VISIBLE LIGHT LASERS
GAIN CONSTANT
MOCVD
500 MICRON
LOW THRESHOLD CURRENT DENSITY
LOSSES
DIFFERENTIAL QUANTUM EFFICIENCY
DOUBLE-HETEROSTRUCTURE LASER
DH LASERS
GAINP-ALGAINP LASERS
CAVITY LENGTH
INTERNAL QUANTUM EFFICIENCY

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