Modelling the m.e.s.f.e.t. output nonlinearity

16 August 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (17) , 515-516
https://doi.org/10.1049/el:19790372

Abstract

Conditions governing the modelling of transductance and drain-conductance nonlinearities from measured data are investigated. A simple representation for regions close to pinch-off, corresponding to mixer operation, is obtained. Results of the modelling are compared to measurements on a typical 1 μm gate length m.e.s.f.e.t.

Keywords

MESFET
SEMICONDUCTOR DEVICE MODELS
OUTPUT NONLINEARITY
MIXER OPERATION CONDITIONS
TRANSCONDUCTANCE NONLINEARITY
DRAIN CONDUCTANCE NONLINEARITY
REGIONS CLOSE TO PINCH-OFF
LARGE SIGNAL EQUIVALENT CIRCUITS

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