High-power InGaAs/GaAs singlemode laser diodes with reactive-ion-etched ridges

3 December 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (25) , 2345-2346
https://doi.org/10.1049/el:19921511

Abstract

Continuous-wave (CW)output powers in excess of 320 mW with fabrication yields as high as 90% have been realised from strained-layer InGaAs/GaAs ridge waveguide laser diodes fabricated by SiCl₄ reactive ion etching. Single longitudinal mode operation to 100 mW and single spatial mode operation up to 200 mW CW at a wavelength of 965 nm wereachieved for 3.5 μm-wide, 650μ-long discrete devices mounted junction-side down. The relative intensity noise at frequencies of 1–2 GHz is ̃140 –150 dB/Hz.

Keywords

965 NM
GAAS
650 MICRON
100 TO 320 MW
LASER DIODES
REACTIVE-ION-ETCHED RIDGES
3.5 MICRON
CONTINUOUS-WAVE
1 TO 2 GHZ
INGAAS-GAAS
SINGLE LONGITUDINAL MODE OPERATION
SICL4
CW OUTPUT POWER
INGAAS
SINGLEMODE
SINGLE SPATIAL MODE OPERATION
RIDGE WAVEGUIDE
FABRICATION YIELDS

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