Molecular-beam epitaxy and migration-enhanced epitaxy growth modes of GaAs on pseudomorphic Si films grown on GaAs(100) substrates
- 1 September 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (5) , 2157-2162
- https://doi.org/10.1116/1.586183