Scanning tunneling microscopy of cubic silicon carbide surfaces

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Abstract
Surface topographies of n‐type β‐SiC single crystals epitaxially grown by chemical vapor deposition on Si(100) and Si substrates inclined at 4° off (100) toward (011) were imaged by a scanning tunneling microscope. The images suggest that smooth surfaces can be achieved by epitaxial growth on the 4°‐off substrates. Oxidation of the β‐SiC surfaces followed by chemical etching to remove the oxide layer also tend to produce smooth surfaces.

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