Electrical properties of as-grown Hg1−xCdxTe epitaxial layers
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (7) , 3772-3775
- https://doi.org/10.1063/1.328166
Abstract
The Hall coefficient and resistivity of Hg1−xCdxTe epitaxial layers with 0.195<xx=0.30 show that as‐grown epitaxial layers are p type, with a carrier concentration and mobility on the order of 1.2×1016 cm−3 and 400 cm2/V s, respectively. The acceptor ionization energy determined by the Hall measurements is found to change with the energy gap of Hg1−xCdxTe . The electrical parameters and compositional uniformity (Δx=±0.001) of the epilayer for x=0.30 indicate that the material is comparable to the best reported bulk Hg1−xCdxTe single crystal.This publication has 6 references indexed in Scilit:
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