Dose Enhancement Effects in MOSFET IC's Exposed in Typical 60Co Facilities
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4388-4393
- https://doi.org/10.1109/tns.1983.4333143
Abstract
The responses of CMOS dosimeters sensitized to ionizing radiation by ion implantation have been used to demonstrate dose enhancement of 55 percent when exposed in typical 60Co facilities. Pairs of these IC's, one type with an alumina lid over the silicon chip and the other with a gold-kovar lid were used to evaluate this effect. Additional tests with a 1.3 mm thick lead filter show that the enhancement is predominately induced by low energy components in the radiation fields.Keywords
This publication has 7 references indexed in Scilit:
- Reducing Errors in Dosimetry Caused by Low Energy Components of Co-60 and Flash X-Ray SourcesIEEE Transactions on Nuclear Science, 1982
- Dose Enhancement Effects in Semiconductor DevicesIEEE Transactions on Nuclear Science, 1982
- An IC Compatible Ionizing Radiation DetectorIEEE Transactions on Nuclear Science, 1981
- The Role of Scattered Radiation in the Dosimetry of Small Device StructuresIEEE Transactions on Nuclear Science, 1980
- Diffusion Equation Model for Kilovolt Electron Transport at X-Irradiated InterfacesIEEE Transactions on Nuclear Science, 1978
- Analytical Photo-Compton Deposition ProfilesIEEE Transactions on Nuclear Science, 1976
- Gamma Dose Distributicns at and near the Interface of Different MaterialsIEEE Transactions on Nuclear Science, 1970