Energy ordering of the excited states of XeF
- 1 July 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (1) , 39-41
- https://doi.org/10.1063/1.90183
Abstract
Ar/Xe/NF3 mixtures were excited by the focused beam from an ArF (193 nm) laser. Xe+ ions are produced by two‐photon ionization, the electrons attach to make F−, and the ions recombine to make XeF*. Radiation is observed in the XeF(B 1/2) →XeF(X 1/2) bands near 351 nm and in the broader XeF(C 3/2) →XeF(A 3/2) band near 460 nm. At low background gas pressure, mostly B‐X uv emission is observed. As the argon pressure is increased to 1000 Torr, the visible/uv band intensity ratio increases to about 3 to 1. We conclude from these results that the C (3/2) state lies 700±70 cm−1 below the B (1/2) state. This conclusion should have a significant impact on our understanding of the fluorescence yields and laser performance of e‐beam‐excited XeF.Keywords
This publication has 4 references indexed in Scilit:
- XeO* production through collisional electronic energy transfer from two-photon excited Xe atomsJournal of Applied Physics, 1978
- The electronic structure of rare gas halide excimersThe Journal of Chemical Physics, 1977
- Ultraviolet-preionized discharge-pumped lasers in XeF, KrF, and ArFApplied Physics Letters, 1976
- Emission spectra of XeBr, XeCl, XeF, and KrFThe Journal of Chemical Physics, 1975