Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation
- 15 November 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 18 (10) , 5545-5559
- https://doi.org/10.1103/physrevb.18.5545
Abstract
Photoemission spectroscopy, constant-final-state spectroscopy, and ion-depth profiling techniques were applied to the study of the formation of Au Schottky barrier on cleaved GaSb, GaAs, and InP. It is found that the deposited Au interacts strongly with the semiconductors, causing decomposition of their surfaces. Further, the Fermi-level pinning is nearly complete atKeywords
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