Band alignment at the CdS/Cu2In4Se7 heterojunction interface
- 13 November 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (20) , 2969-2971
- https://doi.org/10.1063/1.114828
Abstract
Band offsets at the CdS/Cu2In4Se7 heterojunction interface were studied by synchrotron radiation soft x-ray photoemission spectroscopy. CdS overlayers were sequentially grown in steps, at room temperature, on the Cu2In4Se7 crystal. Photoemission measurements were acquired after each growth to determine the electronic structure at the heterojunction interface. Results of these measurements indicate that the valence-band offset ΔEvbm is 1.10(±0.20) eV and that the conduction-band offset ΔEcbm is 0.22(±0.20) eV for the CdS/Cu2In4Se7 heterojunction.Keywords
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