CW operation of 1.5 μm InGaAsP/InP BH lasers with a reactive-ion-etched facet

15 August 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (17) , 748-749
https://doi.org/10.1049/el:19850527

Abstract

The reactive-ion-etching (RIE) technique utilising a TiO₂ mask and Cl₂-Ar gas is successfully applied to facet mirror fabrication of 1.5 μm InGaAsP/InP buried-heterostructure (BH) lasers. Room-temperature CW operation has been achieved with a structure having one etched and one cleaved facet. A threshold current value of 30 mA at 25°C has been achieved for a laser with a 380 μm cavity length.

Keywords

III-V SEMICONDUCTORS
1.5 MICRONS WAVELENGTH
FACET MIRROR FABRICATION
SEMICONDUCTOR LASERS
CW OPERATION
30 MA THRESHOLD CURRENT
OPTICAL WORKSHOP TECHNIQUES
BH LASERS
ROOM TEMPERATURE OPERATION
RIE
CLEAVED FACE
TIO2 MASK
BURIED-HETEROSTRUCTURE
CL2-AR GAS
REACTIVE-ION-ETCHED FACET

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