Distribution of occupied states in a-C:H and a-Si1-xCx: H alloys as determined by total yield spectroscopy
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 867-870
- https://doi.org/10.1016/s0022-3093(05)80257-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopyJournal of Non-Crystalline Solids, 1989
- Distribution of occupied near-surface band-gap states ina-Si:HPhysical Review B, 1988
- Guiding principle for preparing highly photosensitive Si-based amorphous alloysJournal of Non-Crystalline Solids, 1987
- Physics of Amorphous Silicon–Carbon AlloysPhysica Status Solidi (b), 1987
- Static Charge Fluctuations in Amorphous SiliconPhysical Review Letters, 1982
- Charge-Density Variation in a Model of Amorphous SiliconPhysical Review Letters, 1980
- Effect of Phonon Energy Loss on Photoemissive Yield near ThresholdPhysical Review B, 1972
- Electronic Structure of Amorphous Si from Photoemission and Optical StudiesPhysical Review B, 1972
- Direct and Indirect Excitation Processes in Photoelectric Emission from SiliconPhysical Review B, 1962
- Theory of Photoelectric Emission from SemiconductorsPhysical Review B, 1962