Fe implantation in In0.53Ga0.47As/InP
- 15 January 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (2) , 481-485
- https://doi.org/10.1063/1.343129
Abstract
Single and multiple energy Fe+ implants are performed in n‐type InGaAs. Rapid thermal and furnace annealings are used to activate the implanted material. Surface Fe accumulation, multiple Fe peaks, and deep in‐diffusion of Fe are observed in the secondary ion mass spectrometry profiles of the implanted material. The crystal lattice perfection of the annealed material is evaluated qualitatively by photoreflectance measurements. A maximum resistivity of 4750 Ω cm is measured in the implanted material.This publication has 26 references indexed in Scilit:
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