High spatial resolution photo-oxidation of a-Si:C at low temperatures H films
- 6 July 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (14) , 930-932
- https://doi.org/10.1049/el:19890624
Abstract
Ultraviolet illumination of hydrogenated amorphous siliconcarbon alloys, a-Si:C:H, produces oxide patterns with a resolution better than 5μm. Notably, the photoinduced oxidation occurs at temperatures less than 50°C for a-Si:C:H films with a carbon content > 30 atomic %. Possible applications include photolithography, apertured membranes, archival optical storage and gate insulators for thin-film transistors.Keywords
This publication has 1 reference indexed in Scilit:
- Structure and H Bonding in Device Quality a-Si:HPublished by Springer Nature ,1985