Analysis of threshold current density in 2.2 μm GaInAsSb/GaAlAsSb/GaSb DH lasers

9 April 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (8) , 417-419
https://doi.org/10.1049/el:19870303

Abstract

From comparison of published experimental data with a theoretical model of GaInAsSb/GaAlAsSb/GaSb DH lasers emitting at 2.2 μm, the Auger coefficient of the active material has been determined to be C ≈ 10⁻²⁸ cm⁶S⁻¹. A threshold current density as low as 2 kA/cm² is expected at 300 K for such a DH with a 0.3 μm-thick active layer and confinement layers with a high aluminium content (x = 0.6).

Keywords

III-V SEMICONDUCTORS
AUGER COEFFICIENT
ACTIVE MATERIAL
DH LASERS
CONFINEMENT LAYERS
2.2 MICRON
GAINASSB-GAALASSB-GASB
SEMICONDUCTOR LASERS

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