High-speed InGaAsP/InGaAsP MQW electroabsorption modulator with high optical power handling capacity

5 November 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (23) , 2157-2159
https://doi.org/10.1049/el:19921385

Abstract

The high-speed and static characteristics at high optical intensity of an InGaAsP/InGaAsP MQW electroabsorption modulator at 1.53μm are investigated. When considering wavelength and device length, and allowing a bandwidth in excess of 20GHz and 2V drive voltage, the authors found that the static and large-signal dynamic performances do not change with 5.6 dBm of coupled optical power. This is the highest optical power level that an electroabsorption modulator (bulk or MQW) has ever been reported to handle without degradation.

Keywords

HIGH-SPEED
HIGH OPTICAL INTENSITY
ELECTROABSORPTION MODULATOR
20 GHZ
INGAASP
LARGE-SIGNAL DYNAMIC PERFORMANCES
2 V
MQW
STATIC CHARACTERISTICS
1.53 MICRON
DRIVE VOLTAGE
HIGH OPTICAL POWER HANDLING CAPACITY

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