Growth and optical properties of single-crystal metastable (GaAs) 1− x Ge x alloys
- 30 September 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (20) , 891-892
- https://doi.org/10.1049/el:19820604
Abstract
Single-crystal metastable (GaAs)1−xGex alloys with 0≤x≤1 have been grown on (100) GaAs substrates using ultra-high-vacuum ion-beam sputter deposition. Optical absorption measurements showed that the direct gap E0 exhibited a large negative, but nonparabolic, bowing as a function of x with a broad minimum E0≃0.5 eV near 35 mole % Ge. Raman results exhibited a nonlinear ‘single-mode’ behaviour, with the longitudinal and transverse optical modes becoming degenerate at x = 1.Keywords
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