Investigations of Photoelectric Phenomena on p‐type Germanium with Dislocations
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 32 (2) , 791-795
- https://doi.org/10.1002/pssb.19690320232
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Extrinsic Photoconductivity in Ge Caused by DislocationsPhysica Status Solidi (b), 1967
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- Dislocations as Traps for Holes in GermaniumPhysica Status Solidi (b), 1965
- Theory of Carrier Recombination at Dislocations in GermaniumPhysica Status Solidi (b), 1964
- Recombination in Plastically Deformed GermaniumPhysical Review B, 1957
- Experimental Determination of Injected Carrier Recombination Rates at Dislocations in SemiconductorsPhysical Review B, 1957
- Effect of Dislocations on the Minority Carrier Lifetime in SemiconductorsPhysical Review B, 1956
- LXXXVII. Theory of dislocations in germaniumJournal of Computers in Education, 1954
- Some geometrical relations in dislocated crystalsActa Metallurgica, 1953