Effect of mechanical stress on the offset voltages of hall devices in Si IC
- 16 June 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 35 (2) , K115-K118
- https://doi.org/10.1002/pssa.2210350252
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A Hall device in an integrated circuitSolid-State Electronics, 1968
- Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and GermaniumJournal of Applied Physics, 1965
- Very Low Offset Hall ProbeJournal of Applied Physics, 1962
- Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance EffectsJournal of Applied Physics, 1961
- Reduction of Misalignment Voltage in Hall CrystalsReview of Scientific Instruments, 1961
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954