OPTICALLY TRIGGERABLE DOMAINS IN GaAs GUNN DIODES
- 15 October 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (8) , 265-267
- https://doi.org/10.1063/1.1652994
Abstract
Illumination of an epitaxial Gunn diode in the anode and central active region with the 1‐nsec light pulse from a mode‐locked He–Ne laser has been observed to trigger a single domain when the diode is biased just below threshold. Cathode illumination of a diode biased above threshold has been observed to inhibit domain nucleation.Keywords
This publication has 4 references indexed in Scilit:
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- The effect of illumination on Gunn oscillations in epitaxial GaAsIEEE Transactions on Electron Devices, 1968
- Electro-optic observation of moving high field domains in high resistivity GaAsSolid-State Electronics, 1968
- Multimode operation in Gunn oscillators induced by cooling and illuminationProceedings of the IEEE, 1967