Study of the density of states of hydrogenated amorphous silicon from time-of-flight and modulated photocurrent experiments
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 447-450
- https://doi.org/10.1016/s0022-3093(05)80151-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- An evaluation of phase-shift analysis of modulated photocurrentsPhilosophical Magazine Part B, 1990
- Determination of the density of states of the conduction-band tail in amorphous materials: Application to a-Si1−xGex:H alloysPhilosophical Magazine Part B, 1990
- Post-transit time-of-flight currents as a probe of the density of states in hydrogenated amorphous siliconPhysical Review B, 1989
- Gap-state distribution in a-Si:H by modulated photocurrent: Shallow-state-deep-state conversion and temperature shift of the electron-transport pathPhilosophical Magazine Part B, 1988
- Phase-shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap statesJournal of Applied Physics, 1981