Electro-optic thin films of zinc sulphide

12 June 1975

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 11 (12) , 262-263
https://doi.org/10.1049/el:19750198

Abstract

Highly ordered single-crystal films of cubic zinc sulphide are grown epitaxially on silicon substrates by sublimation in u.h.v. The electro-optic coefficients are measured using a sensitive a.c. method and values of r₄₁ up to 6.73×10⁻¹³ mV⁻¹ are reported.

Keywords

SILICON SUBSTRATES
ELECTROOPTIC COEFFICIENTS
SUBLIMATION
EPITAXIAL GROWTH
ULTRA HIGH VACUUM
ZNS
ELECTROOPTIC THIN FILMS
SINGLE CRYSTAL FILMS

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