Optically pumped ultrashort cavity In_1−xGaxAsyP_1−y lasers: picosecond operation between 083 and 159 μm
- 1 November 1981
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 6 (11) , 534-536
- https://doi.org/10.1364/ol.6.000534
Abstract
Ultrashort-cavity, thin-film lasers from In1−xGaxAsyP1−y of five different compositions, including InP and In0.53Ga0.47As, have been made to lase between 0.83 and 1.59 μm. The multitude of lasing wavelengths observed had line-to-line separations of less than 10 nm. The lasers were pumped with 1-psec pulses from a mode-locked dye laser. An output pulse of 6-psec duration was measured at a wavelength of 1.16 μm.Keywords
This publication has 15 references indexed in Scilit:
- Broadband tunable picosecond semiconductor lasersApplied Physics Letters, 1981
- Synchronously pumped mode-locked CdS platelet laserApplied Physics Letters, 1981
- Synchronously pumped mode-locked GaAs laserApplied Physics Letters, 1981
- Picosecond pulses from an optically pumped ribbon-whisker laserApplied Physics Letters, 1980
- Picosecond pulse generation by passive mode locking of diode lasersApplied Physics Letters, 1980
- Simple picosecond pulse generation scheme for injection lasersElectronics Letters, 1980
- Laser action in photopumped GaAs ribbon whiskersJournal of Applied Physics, 1980
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Picosecond optical pulse generation from an r.f. modulated AlGaAs d.h. diode laserElectronics Letters, 1979
- Picosecond pulse generation with a cw GaAlAs laser diodeApplied Physics Letters, 1978