Study on decrease in lasing threshold current of GaAs/AlGaAs single quantum-well lasers through introduction of superlattice waveguide layers

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Abstract
A systematic study for evaluating the effect of introducing short-period superlattice waveguide layers on the threshold current of single quantum-well diode lasers is reported. The waveguide layers which consist of short-period GaAs/AlAs superlattices, in place of AlGaAs alloys, resulted in a decrease by a factor of 4–6 in the lasing threshold current density of GaAs/AlGaAs single quantum-well diode lasers of separate confinement heterostructure. A time-resolved photoluminescence study of those laser structures revealed that the threshold current reduction was the result of an improvement of overall nonradiative carrier recombination lifetime of single quantum wells by more than a factor of 10.