MMIC compatible AlSb/InAs HEMT with stable AlGaSb buffer layers
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In this paper, we present state-of-the-art f/sub T/ and f/sub max/ results of 130 GHz, and 110 GHz for AlSb/InAs HEMTs with AlGaSb/AlSb metamorphic buffer layers that demonstrate InAs-channel HEMTs that are stable with exposure to air and are compatible with standard MMIC production processes.Keywords
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