Interface State Density Reduction and Effect of Oxidation Temperature on Fluorine Incorporation and Profiling for Fluorinated Metal Oxide Semiconductor Capacitors
- 1 April 1993
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 140 (4) , 1160-1164
- https://doi.org/10.1149/1.2056216
Abstract
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