Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signature
- 1 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 864-867
- https://doi.org/10.1016/s0022-0248(98)01476-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- In situ composition control of III-As1 − xSbx alloys during molecular beam epitaxy using line-of-sight mass spectrometryJournal of Crystal Growth, 1997
- Study of interface asymmetry in InAs–GaSb heterojunctionsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Scanning tunneling microscopy of InAs/GaSb superlattices with various growth conditionsSuperlattices and Microstructures, 1994