Autocompensation in doped amorphous silicon

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Abstract
Studies based predominantly on luminescence and electron spin resonance provide strong evidence for defect formation concomitant with doping of glow discharge produced a‐Si:H. In samples doped with boron or phosphorus, the increase of non‐radiative recombination observed in luminescence correlates with the increase of the dangling bond signal seen in light‐induced ESR. This directly indicates an increase in the number of dangling‐bond‐like centers with doping. Compensation allows the Fermi level and dopant levels to be varied independently. In compensated samples with EF near midgap, the number of dangling bond centers is reduced. An autocompensation mechanism is proposed to explain this Fermi level‐dependent defect formation.

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