Optical characterization of GaAs quantum wire microcrystals
- 31 October 1991
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 80 (3) , 235-238
- https://doi.org/10.1016/0038-1098(91)90188-2
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Influence of the confinement potential on the electron-hole-pair states in semiconductor microcrystallitesPhysical Review B, 1990
- Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical propertiesPhysical Review B, 1988
- (AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Quantum well lasers--Gain, spectra, dynamicsIEEE Journal of Quantum Electronics, 1986
- Highly anisotropic optical properties of single quantum well waveguidesApplied Physics Letters, 1985
- Elastic Scattering of Exciton Polaritons by Neutral ImpuritiesPhysical Review Letters, 1985
- Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyApplied Physics Letters, 1984
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964