Lattice Thermal Conductivity of Si in the Temperature Range (2-1400)°K

In the present paper we have determined the temperature dependence of the three-phonon relaxation rate, which is valid for the entire temperature range (2-1400)°K for Si and is expressed as ${\tau }_{3\mathrm{ph}}^{-1\mathrm{}}\propto T^{m\left(T\right)\mathrm{}}{e}^{\frac{-\theta }{\alpha T}}$ The exponent $m$, which depends upon temperature, is determined with the help of Guthrie's expression as given in the Sharma-Dubey-Verma model. Using the SDV model we have calculated the lattice thermal conductivity of Si in the temperature range (2-1400)°K and found excellent agreement between experimental and calculated results.