Parallel magnetic field induced giant magnetoresistance in low density {\it quasi}-two dimensional layers

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  • 30 September 1999
Abstract
We provide a theoretical explanation for the recently observed giant positive magnetoresistance in high mobility low density {\it quasi}-two dimensional systems in n-type Si inversion layers and p-type GaAs heterostructures. Our explanation is based on the strong coupling of the parallel field to the {\it orbital} motion arising from the {\it finite} layer thickness and the large Fermi wavelength of the {\it quasi}-two dimensional system. We predict a large in-plane resistivity anisotropy based on our theory.

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