Dislocation Etch Pits in Silicon Crystals
- 1 December 1956
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 27 (12) , 1413-1415
- https://doi.org/10.1063/1.1722279
Abstract
A method for suitably etching dislocations in silicon crystals is reported. Using this etch, dislocations in various arrays were observed: low angle boundaries, slip lines, polygonization walls, and bent crystal distributions.This publication has 5 references indexed in Scilit:
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- Dislocations in GermaniumJournal of Applied Physics, 1955
- Dislocations in polygonized germaniumActa Metallurgica, 1955
- Recombination of Holes and Electrons at Lineage Boundaries in GermaniumPhysical Review B, 1954
- Observations microscopiques et interferométriques de figures de corrosion, et leur interprétation à l'aide des dislocationsJournal de Chimie Physique et de Physico-Chimie Biologique, 1953