Low-current alpha in silicon transistors

1 November 1962

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices

Vol. 9 (6) , 474-478
https://doi.org/10.1109/t-ed.1962.15022

Abstract

The well-known falloff of alpha at low current in silicon has been investigated by means of transistors with guardring emitters. It has been found that the overwhelming part of the base current (at low currents) originates at the surface edge of the emitter. When this current is well understood in terms of existing theory.

Keywords

This publication has 7 references indexed in Scilit:

Distribution of recombination current in emitter-base junctions of silicon transistors
IRE Transactions on Electron Devices, 1962
The emitter tetrode
IRE Transactions on Electron Devices, 1958
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
Proceedings of the IRE, 1957
The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity
Proceedings of the IRE, 1956
On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current
Proceedings of the IRE, 1954
$p - n$ Junction Transistors
Physical Review B, 1951
The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors
Bell System Technical Journal, 1949