Phase separation in InGaN grown by metalorganic chemical vapor deposition
- 5 January 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (1) , 40-42
- https://doi.org/10.1063/1.120639
Abstract
We report on phase separation in thick InGaN films with up to 50% InN grown by metalorganic chemical vapor deposition from 690 to 780 °C. InGaN films with thicknesses of 0.5 μm were analyzed by θ–2θ x-ray diffraction, transmission electron microscopy (TEM), and selected area diffraction (SAD). Single phase InGaN was obtained for the as-grown films with <28% InN. However, for films with higher than 28% InN, the samples showed a spinodally decomposed microstructure as confirmed by TEM and extra spots in SAD patterns that corresponded to multiphase InGaN.Keywords
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