Molecular beam epitaxial growth of low-resistivity ZnSe films
- 15 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (2) , 97-98
- https://doi.org/10.1063/1.91039
Abstract
Single‐crystalline films of low‐resistivity ZnSe have been successfully grown by molecular beam epitaxy (MBE). The film shows good crystallinity, having a smooth and flat surface as revealed by RHEED and SEM investigations. The resistivity of as‐grown MBE ZnSe is low (typically ∼1 Ω cm) and the mobility of the film is relatively high (typically ∼300 cm2/V sec) at room temperature. The concentrations of the residual electrically active donor and acceptor centers are ND =8×1016 cm−3 and NA=6×1016 cm−3, respectively. The strong blue band‐edge photoluminescence peak is observed even at room temperature, and the luminescence intensity at longer wavelength is very weak.Keywords
This publication has 8 references indexed in Scilit:
- Reabsorption of the excitonic luminescence in direct band gap semiconductorsPhysical Review B, 1977
- Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977
- Molecular Beam Epitaxy of ZnSe and ZnTe Thin-Film Single CrystalsJapanese Journal of Applied Physics, 1977
- Blue electroluminescence from ZnSe diodesJournal of Applied Physics, 1977
- Molecular beam epitaxy of II-VI compoundsJournal of Applied Physics, 1975
- High Electron Mobility in Zinc Selenide Through Low-Temperature AnnealingJournal of Applied Physics, 1971
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963
- PURIFICATION OF II–VI COMPOUNDS BY SOLVENT EXTRACTIONApplied Physics Letters, 1962