Free-carrier reflectivity in optically inhomogeneous silicon
- 1 November 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (11) , 4612-4615
- https://doi.org/10.1063/1.1660976
Abstract
Interpretation of reflectivity data from the surface of a semiconductor containing an impurity gradient and, in particular, a p‐n junction is of practical importance. Current theories predict a shift in the wavelength of the reflection minimum to shorter wavelengths. In this theory and subsequent measurements, such behavior was not observed; in fact, almost no shift of wavelength occurred even for the most lightly doped and shallow junction samples. The results obtained indicate that the surface free‐carrier concentration can be obtained directly from a reflectivity measurement.This publication has 6 references indexed in Scilit:
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- Resistance to the motion of dislocations in the L12 superstructure caused by short-range orderPhysica Status Solidi (a), 1972
- Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor LayersJapanese Journal of Applied Physics, 1968
- The Reflection Coefficient of Optically Inhomogeneous SolidsPhysica Status Solidi (b), 1967
- Infrared Reflectivity of N on N+ Si WafersJapanese Journal of Applied Physics, 1965
- Diffusion of Boron into SiliconJournal of the Physics Society Japan, 1964