Fabrication of GaAs quantum wire structure using metal organic molecular beam epitaxy
- 21 January 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (2) , 163-165
- https://doi.org/10.1049/el:19930110
Abstract
GaAs quantum wires (100 × 20 nm2) buried in AlAs layers have been successfully fabricated using metal organic molecular beam epitaxy (MOMBE) for the first time. The underlying growth mechanism is that, under appropriate As4 pressure in MOMBE, GaAs preferentially grows only on the sidewalls of the patterned (1̅1̅1̅)B substrate without any formation of GaAs on the (1̅1̅1̅)B surface.Keywords
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