Ballistic electron emission in silicide–silicon interfaces

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Abstract
Ballistic electron emission microscopy (BEEM) of the NiSi2/Si(111) interface has been carried out under ultrahigh vacuum conditions. Atomically resolved scanning tunneling microscopy (STM) images of this surface show an unreconstructed (1×1) structure with Si adatoms that tend to form trimers. STM and BEEM-current images are taken simultaneously for type-A and -B interfaces. The BEEM currents measured for types A and B differ by less than 10% of the total BEEM current. The results may originate from field pinching between two domains.