Empirical formulas for MIS microstrip line parameters

25 May 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (11) , 739-741
https://doi.org/10.1049/el:19890500

Abstract

A method is proposed to obtain closed-form empirical formulas to calculate the effective dielectric constant, the attenuation constant and the characteristic impedance of a microstrip line on an Si-SiO₂ structure for varying strip width and frequency. The formulas are valid in both the slow-wave mode (low frequency) and the skin-effect mode (high frequency). The dielectric mode is not taken into account. For strip widths varying from 30 µm to 80 µm, high accuracy was obtained.

Keywords

HIGH FREQUENCY
LOW FREQUENCY
ATTENUATION CONSTANT
EFFECTIVE DIELECTRIC CONSTANT
CHARACTERISTIC IMPEDANCE
HF MODE
MONOLITHIC MICROWAVE IC
SI-SIO2 STRUCTURE
SKIN-EFFECT MODE
SLOW-WAVE MODE
LF MODE
CLOSED-FORM EMPIRICAL FORMULAS
MIS MICROSTRIP LINE PARAMETERS
STRIP WIDTH
MMIC
30 TO 80 MICRON

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