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Semiconductor Doping by High Energy 1–2.5 Mev Ion Implantation
Home
Publications
Semiconductor Doping by High Energy 1–2.5 Mev Ion Implantation
Semiconductor Doping by High Energy 1–2.5 Mev Ion Implantation
SR
S. Roosild
S. Roosild
RD
R. Dolan
R. Dolan
BB
B. Buchanan
B. Buchanan
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1 January 1968
journal article
Published by
The Electrochemical Society
in
Journal of the Electrochemical Society
Vol. 115
(3)
,
307
https://doi.org/10.1149/1.2411148
Abstract
No abstract available
Keywords
NITROGEN
PHOSPHORUS
ION IMPLANTATION
Cited
Cited by 31 articles
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