Memory switching in thermally grown titanium oxide films
- 14 May 1985
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 18 (5) , 911-917
- https://doi.org/10.1088/0022-3727/18/5/015
Abstract
Current transport mechanisms have been investigated in memory switched titanium oxide films. Two kinds of memory modes have been identified. It is ascertained from experimental evidence that a number of different mechanisms are operative in various memory substrates. These may be hopping, space-charge-limited, or metallic-type mechanisms.Keywords
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