The Effect of CH 4 on CVD β ‐ SiC Growth

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Abstract
The chemical vapor deposition (CVD) method for growth in the methyltrichlosilane (MTS) and hydrogen system was carried out above 1450°C in order to obtain a perfect crystal. In this article, a CVD method for growing films on a graphite substrate was carried out by adding to the gas system. The not only decreased the deposition temperature, but also influenced the morphology, crystallographic properties, and growth mechanism of deposits. Although (cubic) was the main phase in the film, (hexagonal or rhombohedral) was also found. The CVD film was examined by means of x‐ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and electron probe microanalysis (EPMA).

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