Ordering of isovalent intersemiconductor alloys
- 15 September 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (9) , 6338-6341
- https://doi.org/10.1103/physrevb.38.6338
Abstract
Recent observations of spontaneous long-range ordering in alloys of isovalent semiconductors, despite independent evidence for repulsive interactions in these systems, are interpreted in terms of first-principles total-energy calculations for ordered compounds and cluster-variation-method calculations for the disordered phase.Keywords
This publication has 21 references indexed in Scilit:
- Ordering in GaAs1−xSbx grown by molecular beam epitaxyApplied Physics Letters, 1987
- The kinetic aspects of ordering in GaAs1-xSbx grown by organometallic vapor phase epitaxyJournal of Crystal Growth, 1987
- First-Principles Calculation of Semiconductor-Alloy Phase DiagramsPhysical Review Letters, 1987
- Ordering and decomposition in semiconductor alloysJournal of Materials Research, 1986
- Atomic structure and ordering in semiconductor alloysPhysical Review B, 1985
- Long-Range Order inPhysical Review Letters, 1985
- Mixing enthalpy and composition fluctuations in ternary III–V semiconductor alloysJournal of Physics and Chemistry of Solids, 1984
- Quantitative correlations of deviations from ideality in binary and pseudobinary solid solutionsJournal of Solid State Chemistry, 1983
- A Lattice Parameter Criterion for Miscibility Gaps in the III–V and II–VI Pseudobinary Solid SolutionsJournal of the Electrochemical Society, 1974
- Phase equilibria in ternary III–V systemsProgress in Solid State Chemistry, 1972