In situ characterization of MBE grown GaAs and Al x Ga1−x As films using RHEED, SIMS, and AES techniques
- 1 June 1977
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 13 (2) , 111-121
- https://doi.org/10.1007/bf00882468
Abstract
No abstract availableKeywords
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