Series operation of Gunn diodes for high r.f. power
- 1 October 1967
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 3 (10) , 455-456
- https://doi.org/10.1049/el:19670360
Abstract
Several GaAs Gunn diodes have been made to operate at a single frequency simultaneously in series operation. This, as explained, is an unexpected result and enables the impedance level of these semiconductor devices to be raised and the power level to be increased. This can have important consequences for ultrahigh-power generation.Keywords
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