Direct observation of switching filaments in chalcogenide glasses
- 1 September 1976
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 22 (1) , 223-227
- https://doi.org/10.1016/0022-3093(76)90022-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Some features relevant to switching processes in the amorphous semiconductor Si12Ge10As30Te48Journal of Non-Crystalline Solids, 1975
- The effects of electrode materials on the switching behaviour of the amorphous semiconductors Si12Ge10As30Te48Journal of Non-Crystalline Solids, 1974
- Properties of filaments in amorphous chalcogenide semiconducting threshold switchesJournal of Non-Crystalline Solids, 1974
- A model for an amorphous semiconductor memory deviceJournal of Non-Crystalline Solids, 1972
- Direct observations of filaments in the ovonic read-mostly memoryJournal of Non-Crystalline Solids, 1972
- Experimental evidence of filament “forming” in non-crystalline chalcogenide alloy threshold switchesJournal of Non-Crystalline Solids, 1971
- Electric field-induced filament formation in AsTeGe glassJournal of Non-Crystalline Solids, 1970