Laser Microwave Photoconductance Studies of Ultraviolet‐Irradiated Silicon Wafers: Effect of Metallic Contamination

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Abstract
The minority carrier recombination lifetimes of ultraviolet‐irradiated silicon wafers were studied using the laser‐microwave photoconductance method. These wafers were intentionally surface contaminated with metals. With ultraviolet irradiation, the effective minority carrier recombination lifetimes of these samples are enhanced. The lifetime enhancement occurs at a faster rate for contaminated wafers. These lifetime enhancements are not permanent; with cessation of the ultraviolet radiation, the preirradiation levels can be restored.

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