Oswald ripening and shape transitions of self-assembled PbSe quantum dots on PbTe (111) during annealing
- 6 November 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (19) , 2991-2993
- https://doi.org/10.1063/1.1323733
Abstract
The thermal stability of faceted self-assembled PbSe quantum dots during annealing is investigated. With increasing annealing time, the dot density is found to decrease rapidly with a simultaneous increase of the average island volumes. In addition, a shape transition from pyramidal islands to truncated pyramids is observed for islands exceeding a critical height of 160 Å. The evolution of island volumes and densities is consistent with Oswald ripening by interface-reaction-limited mass transfer. This is a clear indication that the as-grown islands do not represent an equilibrium structure and that their narrow size dispersion is a purely kinetic effect.Keywords
This publication has 12 references indexed in Scilit:
- Molecular beam epitaxy of highly faceted self-assembled IV–VI quantum dots with bimodal size distributionJournal of Crystal Growth, 1999
- Direct formation of self-assembled quantum dots under tensile strain by heteroepitaxy of PbSe on PbTe (111)Applied Physics Letters, 1998
- Self-Limiting Growth of Strained Faceted IslandsPhysical Review Letters, 1998
- Coarsening of Self-Assembled Ge Quantum Dots on Si(001)Physical Review Letters, 1998
- Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at EquilibriumPhysical Review Letters, 1997
- Self-assembled island formation in heteroepitaxial growthApplied Physics Letters, 1997
- Structural Transition in Large-Lattice-Mismatch HeteroepitaxyPhysical Review Letters, 1996
- Spontaneous Ordering of Arrays of Coherent Strained IslandsPhysical Review Letters, 1995
- Midinfrared lead salt multi-quantum-well diode lasers with 282 K operationApplied Physics Letters, 1995
- Clustering on surfacesSurface Science Reports, 1992