Spatially resolved electrical and spectroscopic studies around dislocations in GaAs single crystals

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Abstract
Spatially resolved electrical and spectroscopic behavior around isolated grown‐in dislocation in p‐type undoped GaAs crystals grown by liquid‐encapsulated Czochralski technique is investigated. Surface spreading resistance is found to remarkably increase at about 100 μm in diameter around dislocations. In a corresponding area, photoluminescence intensity of the 1.49‐eV and 1.44‐eV acceptor level peaks decreases. However, that of 0.8‐eV deep level peak does not vary. These results demonstrate that dislocations should give rise to carrier density variation due to the relative concentration change of levels around them.